1. Identity statement | |
Reference Type | Journal Article |
Site | mtc-m16.sid.inpe.br |
Holder Code | isadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S |
Identifier | 6qtX3pFwXQZ3r59YDa/KbR9p |
Repository | sid.inpe.br/iris@1916/2006/02.16.17.22 (restricted access) |
Last Update | 2006:02.16.17.22.00 (UTC) administrator |
Metadata Repository | sid.inpe.br/iris@1916/2006/02.16.17.22.57 |
Metadata Last Update | 2018:06.05.01.20.24 (UTC) administrator |
Secondary Key | INPE-13537-PRE/8750 |
ISSN | 0168-583X 0167-5087 |
Citation Key | UedaReGuBeAbBe:2001:HiDoNi |
Title | High dose nitrogen and carbon shallow implantation in Si by plasma immersion ion implantation |
Year | 2001 |
Month | Apr |
Access Date | 2024, May 09 |
Secondary Type | PRE PI |
Number of Files | 1 |
Size | 109 KiB |
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2. Context | |
Author | 1 Ueda, Mario 2 Reuther, H. 3 Gunzel, R. 4 Beloto, Antonio Fernando 5 Abramof, Eduardo 6 Berni, Luis Angelo |
Resume Identifier | 1 8JMKD3MGP5W/3C9JHSB 2 3 4 8JMKD3MGP5W/3C9JGJ8 5 8JMKD3MGP5W/3C9JGUH |
Group | 1 LAP-INPE-MCT-BR 2 LAS-INPE-MCT-BR |
Affiliation | 1 Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Plasmas, (INPE, LAP) |
Journal | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms |
Volume | 175-177 |
Pages | 715-720 |
History (UTC) | 2006-02-16 17:22:58 :: vinicius -> administrator :: 2018-06-05 01:20:24 :: administrator -> marciana :: 2001 |
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3. Content and structure | |
Is the master or a copy? | is the master |
Content Stage | completed |
Transferable | 1 |
Content Type | External Contribution |
Keywords | Plasma immersion ion implantation Silicon nitride Silicon carbide |
Abstract | We have performed plasma immersion ion implantation (PIII) processing to dope Si (0 0 1) wafers with nitrogen and carbon at high doses, relying on two different PIII systems: one at the Institute for Ion Beam Physics at Dresden and the other at INPE. In the first system based on an ECR plasma source, we carried out nitrogen and carbon implantation in Si samples at 35 keV, with delivered doses (DD) ranging from 0.6×1017 to 3.1×1018 cm−2. On the other hand, nitrogen implantation in Si samples at 12 keV with doses from 1.2×1017 to 2.4×1018 cm−2 were conducted in the second system with a glow discharge plasma source. Surface characterizations of these samples based on Auger electron spectroscopy (AES), surface profiler, Fourier transform infrared (FTIR) spectroscopy and a high-resolution X-ray diffractometer indicated different implanted profiles, maximum implanted depths, stresses and etching depths, as well as characteristic surface colors, depending on the doped species, energies and used delivered doses. Comparisons of these results and their interrelationship are discussed in this paper. |
Area | FISPLASMA |
Arrangement 1 | urlib.net > LABAS > High dose nitrogen... |
Arrangement 2 | urlib.net > Fonds > Produção anterior à 2021 > LABAP > High dose nitrogen... |
doc Directory Content | access |
source Directory Content | there are no files |
agreement Directory Content | there are no files |
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4. Conditions of access and use | |
Language | en |
Target File | 59.pdf |
User Group | administrator vinicius |
Visibility | shown |
Copy Holder | SID/SCD |
Archiving Policy | denypublisher denyfinaldraft24 |
Read Permission | deny from all and allow from 150.163 |
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5. Allied materials | |
Next Higher Units | 8JMKD3MGPCW/3ESR3H2 8JMKD3MGPCW/3ET2RFS |
Dissemination | WEBSCI; PORTALCAPES; COMPENDEX. |
Host Collection | sid.inpe.br/banon/2003/08.15.17.40 |
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6. Notes | |
Empty Fields | alternatejournal archivist callnumber copyright creatorhistory descriptionlevel documentstage doi e-mailaddress electronicmailaddress format isbn label lineage mark mirrorrepository nextedition notes number orcid parameterlist parentrepositories previousedition previouslowerunit progress project readergroup rightsholder schedulinginformation secondarydate secondarymark session shorttitle sponsor subject tertiarymark tertiarytype typeofwork url versiontype |
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7. Description control | |
e-Mail (login) | marciana |
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