1. Identity statement | |
Reference Type | Journal Article |
Site | mtc-m16.sid.inpe.br |
Holder Code | isadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S |
Identifier | 6qtX3pFwXQZsFDuKxG/CSUEe |
Repository | sid.inpe.br/marciana/2004/07.26.11.44 (restricted access) |
Last Update | 2004:07.26.03.00.00 (UTC) administrator |
Metadata Repository | sid.inpe.br/marciana/2004/07.26.11.44.39 |
Metadata Last Update | 2018:06.05.01.21.00 (UTC) administrator |
Secondary Key | INPE-10994-PRE/6450 |
ISSN | 0022-3093 |
Citation Key | AbramofFerrBeloUeta:2004:InNaPo |
Title | Investigation of nanostructured porous silicon by Raman spectroscopy and atomic force microscopy  |
Year | 2004 |
Access Date | 2025, May 09 |
Secondary Type | PRE PI |
Number of Files | 1 |
Size | 366 KiB |
|
2. Context | |
Author | 1 Abramof, Patrícia Guimarães 2 Ferreira, N. G. 3 Beloto, Antonio Fernando 4 Ueta, Antonio Yukio |
Resume Identifier | 1 2 3 8JMKD3MGP5W/3C9JGJ8 4 8JMKD3MGP5W/3C9JGJU |
Group | 1 LAS-INPE-MCT-BR |
Affiliation | 1 Centro de Desenvolvimento de Tecnologia e Recursos Humanos 2 Centro T cnico Aeroespacial– Divisaão de Matetriais AMR/IAE/ CTA 3 Instituto Nacional de Pesquisas, Espaciais |
Journal | Journal of Non-Crystalline Solids |
Volume | 338-40 |
Pages | 139-142 |
History (UTC) | 2006-01-23 10:09:47 :: marciana -> administrator :: 2018-06-05 01:21:00 :: administrator -> marciana :: 2004 |
|
3. Content and structure | |
Is the master or a copy? | is the master |
Content Stage | completed |
Transferable | 1 |
Content Type | External Contribution |
Keywords | stress |
Abstract | A set of porous silicon layers was produced by stain etching using a solution of HF:HNO3 in a composition ratio of 500:1 with etching time varying from 1 to 10 min. The residual stress and the correlation length of the layers were obtained through the analysis of the micro-Raman spectra using a phonon confinement model including a term to account for the amorphous phase. The correlation length, which corresponds to the crystallite size, is found to decrease as the etching time increases, and agrees with the values obtained by atomic force microscopy analysis. The residual compressive stress tends to increase with etching time, as expected by the smaller crystallite size. However, an oscillatory behavior is detected for etching times higher than 4 min. This result correlates well with the photoluminescence measurements and can be understood by the porous silicon layer formation observed with the atomic force microscopy. |
Area | FISMAT |
Arrangement | urlib.net > BDMCI > Fonds > Produção anterior à 2021 > LABAS > Investigation of nanostructured... |
doc Directory Content | access |
source Directory Content | there are no files |
agreement Directory Content | there are no files |
|
4. Conditions of access and use | |
Language | en |
Target File | abramofinvestigation.pdf |
User Group | administrator marciana |
Visibility | shown |
Copy Holder | SID/SCD |
Archiving Policy | denypublisher denyfinaldraft24 |
Read Permission | deny from all and allow from 150.163 |
|
5. Allied materials | |
Next Higher Units | 8JMKD3MGPCW/3ESR3H2 |
Dissemination | WEBSCI; PORTALCAPES; COMPENDEX. |
Host Collection | sid.inpe.br/banon/2003/08.15.17.40 |
|
6. Notes | |
Empty Fields | alternatejournal archivist callnumber copyright creatorhistory descriptionlevel documentstage doi e-mailaddress electronicmailaddress format isbn label lineage mark mirrorrepository month nextedition notes number orcid parameterlist parentrepositories previousedition previouslowerunit progress project readergroup rightsholder schedulinginformation secondarydate secondarymark session shorttitle sponsor subject tertiarymark tertiarytype typeofwork url versiontype |
|
7. Description control | |
e-Mail (login) | marciana |
update | |
|