1. Identity statement | |
Reference Type | Journal Article |
Site | mtc-m16.sid.inpe.br |
Holder Code | isadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S |
Identifier | 6qtX3pFwXQZsFDuKxG/Dopg9 |
Repository | sid.inpe.br/marciana/2004/09.06.14.38 (restricted access) |
Last Update | 2004:09.06.03.00.00 (UTC) administrator |
Metadata Repository | sid.inpe.br/marciana/2004/09.06.14.38.26 |
Metadata Last Update | 2021:07.28.21.26.29 (UTC) administrator |
Secondary Key | INPE-11262-PRE/6704 |
ISBN/ISSN | 0038-1098 |
ISSN | 0038-1098 |
Citation Key | SilvaDanMotCanFaz:1996:ImStNa |
Title | Impurity states in the narrow band-gap semiconductor n-type InSb |
Project | MATCON: Física da Matéria Condensada |
Year | 1996 |
Month | July |
Access Date | 2024, May 11 |
Secondary Type | PRE PI |
Number of Files | 1 |
Size | 236 KiB |
|
2. Context | |
Author | 1 Silva, Antonio Ferreira da 2 Dantas, N. Souza 3 Mota, F. de Brito 4 Canuto, S. 5 Fazzio, A. |
Resume Identifier | 1 8JMKD3MGP5W/3C9JGJC |
Group | 1 LAS-INPE-MCT-BR |
Affiliation | 1 Instituto Nacional de Pesquisas Espaciais-INPE, Laboratório Associado de Sensores e Materiais (INPE.LAS) 2 Instituto de Física, Universidade Federal da Bahia (UFBA) 3 Instituto de Física, Universidade de São Paulo (USP) 4 Instituto de Física, Universidade de São Paulo (USP) 5 Instituto de Física, Universidade de São Paulo (USP) |
Journal | Solid State Communication |
Volume | 99 |
Number | 4 |
Pages | 295-297 |
History (UTC) | 2006-09-28 22:36:43 :: administrator -> sergio :: 2008-01-07 12:50:01 :: sergio -> marciana :: 2008-02-18 14:06:46 :: marciana -> administrator :: 2021-07-28 21:26:29 :: administrator -> marciana :: 1996 |
|
3. Content and structure | |
Is the master or a copy? | is the master |
Content Stage | completed |
Transferable | 1 |
Content Type | External Contribution |
Keywords | SENSORS AND MATERIALS Disordered systems Semiconductors Impurities in semiconductors Optical properties Metal SENSORES E MATERIAIS Sistemas desordenados Semicondutores Impurezas Propriedades ópticas |
Abstract | We investigate impurity pair and triad formations in the narrow band-gap semiconductor n-doped InSb. It is found that in the region of the band-gap energy, Eg = 0.23 eV, at 0 K, the effects of such clusters play a relevant role in the optical properties around and below the ionization energy of an isolated impurity (i.e., Ei = 0.64 meV). The transition for the uncompensated system is obtained as the concentration of impurities exceeds Nc = 4.7 × 1013 cm−3. |
Area | FISMAT |
Arrangement | urlib.net > BDMCI > Fonds > Produção anterior à 2021 > LABAS > Impurity states in... |
doc Directory Content | access |
source Directory Content | there are no files |
agreement Directory Content | there are no files |
|
4. Conditions of access and use | |
Language | en |
Target File | impurity.pdf |
User Group | administrator marciana sergio |
Visibility | shown |
Copy Holder | SID/SCD |
Archiving Policy | denypublisher denyfinaldraft24 |
Read Permission | deny from all and allow from 150.163 |
|
5. Allied materials | |
Next Higher Units | 8JMKD3MGPCW/3ESR3H2 |
Dissemination | WEBSCI; PORTALCAPES; COMPENDEX. |
Host Collection | sid.inpe.br/banon/2003/08.15.17.40 |
|
6. Notes | |
Empty Fields | alternatejournal archivist callnumber copyright creatorhistory descriptionlevel documentstage doi e-mailaddress electronicmailaddress format isbn label lineage mark mirrorrepository nextedition notes orcid parameterlist parentrepositories previousedition previouslowerunit progress readergroup rightsholder schedulinginformation secondarydate secondarymark session shorttitle sponsor subject tertiarymark tertiarytype typeofwork url versiontype |
|
7. Description control | |
e-Mail (login) | marciana |
update | |
|