%0 Journal Article
%@holdercode {isadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S}
%@nexthigherunit 8JMKD3MGPCW/3ESR3H2
%@archivingpolicy denypublisher denyfinaldraft
%@usergroup administrator
%@usergroup sergio
%3 quadrupole line.pdf
%B Soviet Physics Semiconductors USSR
%@dissemination WEBSCI
%X The eletric field gradiente distribution function at neural donors in the impurity (energy) bando of a lightly doped compensated semiconductor at low temperatures was calculated, analytically for weak compensation and by computer simulation over a wide compensation range. The function found determines the line profile for the transition between 1s and 2 p0 states of a shallow donor in gallium arsenide in experiments on photothermal magnetic spectroscopy.
%8 Sep.
%N 9
%T Quadrupole Line-Broadening for Hydrogen-Like Impurities in Lightly Doped Compensated Semiconductors
%@secondarytype PRE PI
%@group LAS-INPE-BR
%@copyholder SID/SCD
%@secondarykey INPE-12948-PRE/8227
%@issn 0038-5700
%2 sid.inpe.br/marciana/2005/07.06.17.26.49
%@affiliation Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Sensores e Materiais(INPE, LAS),
%P 1002-1004
%4 sid.inpe.br/marciana/2005/07.06.17.26
%D 1988
%V 22
%A Daranovskii, S. D.,
%A Gelmont, B. L.,
%A Andrada e Silva, Erasmo Assumpcao de,
%A Lima, Invan Costa da Cunha,
%@area FISMAT