%0 Journal Article
%@holdercode {isadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S}
%@nexthigherunit 8JMKD3MGPCW/3ESR3H2
%@archivingpolicy denypublisher denyfinaldraft12
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%@resumeid 8JMKD3MGP5W/3C9JH33
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%3 diamond coating.pdf
%@dissemination WEBSCI
%@secondarykey INPE-12359-PRE/7663
%@issn 1380-2224
%A Baranauskas,  V.,
%A Chang,  D. C.,
%A Li,  B. B.,
%A Peterlevitz,  A. C.,
%A Trava-Airoldi, Vladimir Jesus,
%A Corat, Evaldo Jose,
%A Singh,  R. K.,
%A Lee,  D. G.,
%T Diamond coating of porous silicon
%B Journal of Porous Materials
%8 Jan.
%D 2000
%V 7
%N 1-3
%P 401-404
%2 sid.inpe.br/iris@1916/2005/03.18.12.23.45
%4 sid.inpe.br/iris@1916/2005/03.18.12.23
%K porous silicon coating, diamond on porous silicon, diamond nucleation.
%X Diamond coatings on porous silicon (PS) samples have been obtained by the hot-filament chemical vapor deposition(CVD) technique. We focused our attention on the coating morphology, showing experimentally that high quality diamond coatings may be produced with the PS sample kept at 710 degrees C. The deposited patterns consist of polycrystalline grains with a plane interface with the PS layer. At 790 degrees C, the quality of the coating is improved but the PS layer becomes damaged, and at 650 degrees C the coating consists of diamond-like carbon particles. Besides the temperature, other factors such as the porosity, roughness and chemical activity of the PS layer deserve attention. We observed that one of the limiting factors of the deposition process was the high nucleation time. Two nucleation mechanisms are involved in the growth process. The first nucleation mechanism occurs on the top of the sharp PS features, subsequently to the nucleation a superficial film, and then a second nucleation mechanism occurs over this surface, which allows the growth process to continue. We also observed the presence of a blue-shift in the luminescence spectra following the coating.
%@language English
%@copyholder SID/SCD
%@secondarytype PRE PI
%@area FISMAT
%@group LAS-INPE-MCT-BR
%@affiliation Baranauskas V (reprint author), Univ Estadual Campinas, Fac Engn Eletr & Comp, Av Albert Einstein,N400, Campinas, SP BR-13083970 Brazil,
%@affiliation Univ Estadual Campinas, Fac Engn Eletr & Comp, Campinas, SP BR-13083970 Brazil,
%@affiliation Inst Nacl Pesquisas Espaciais, Lab Associado Sensores & Mat, Sao Jose Dos Campos, BR-12201 Brazil,
%@affiliation Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA,