%0 Journal Article
%@holdercode {isadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S}
%@nexthigherunit 8JMKD3MGPCW/3ESR3H2 8JMKD3MGPCW/3ET2RFS
%@archivingpolicy denypublisher denyfinaldraft24
%@dissemination WEBSCI; PORTALCAPES; COMPENDEX.
%@issn 0168-583X
%@issn 0167-5087
%@resumeid
%@resumeid
%@resumeid
%@resumeid
%@resumeid
%@resumeid 8JMKD3MGP5W/3C9JGJ8
%@resumeid 8JMKD3MGP5W/3C9JGUH
%@usergroup administrator
%@usergroup erich@sid.inpe.br
%@usergroup sergio
%3 plasma immersion.pdf
%X A DC glow discharge plasma source was used in a plasma immersion ion implantation (PIII) experiment providing nitrogen plasmas with densities of 1±31010 cmÿ3 and temperatures of 5±10 eV. Nitrogen ions were extracted from these plasmas and implanted in a variety of immersed samples (Al 5040, SS 304, Si) using repetitive high voltage pulses from two types of sources: PFN pulser and a hard tube pulser. Due to the high potential present in our plasma (350 V), a signi®cant sputter etching of the samples surface occurred at long irradiation times. An electron shower source was used to lower this potential allowing its control from 0 to 350 V. Operating the plasma source at potentials below 70 V reduced the sputtering to negligible levels and a retained dose of 1:5  1017 cmÿ2 was achieved in a silicon surface, after irradiation of 1500 min. For plasma with potential of 350 V (no electron shower), the retained doses in Al 5040 and SS 304 samples were smaller than 5  1016 cmÿ2, for same plasma and pulser conditions (but 2500 min irradiation), con®rming the deleterious eects of sputtering measured in Si samples. Upon using the higher repetition rate pulser, the treatment time was reduced by a factor of 700, thus easing considerably the sputtering problem. Ó 2000 Elsevier Science B.V. All rights reserved.
%T Plasma immersion ion implantation using a glow discharge source with controlled plasma potential
%@secondarytype PRE PI
%K Plasma sources, Plasma immersion ion implantation, Surface analysis.
%@group LAP-INPE-MCT-BR
%@group LAS-INPE-MCT-BR
%@e-mailaddress erich@sid.inpe.br
%@secondarykey INPE-12291-PRE/7611
%@copyholder SID/SCD
%2 sid.inpe.br/iris@1916/2005/04.04.14.28.13
%@affiliation Instituto Nacional de Pesquisas Espaciais (INPE)
%@affiliation Campos, S. Paulo, Brazil
%@affiliation Research Center Rossendorf, Institute of Ion Beam Physics and Materials Research, Dresden, Germany
%B Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
%P 1064-1068
%4 sid.inpe.br/iris@1916/2005/04.04.14.28
%D 2000
%V 161-163
%A Ueda, Mario|,
%A Gomes,  Geraldo F.,
%A Berni, L. A.,
%A Rossi, J. O.,
%A Barroso, Joaquim Jose,
%A Beloto, Antonio Fernando,
%A Abramof, Eduardo,
%A Reuther, H,
%@area FISMAT