%0 Journal Article
%@holdercode {isadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S}
%@nexthigherunit 8JMKD3MGPCW/3ESR3H2 8JMKD3MGPCW/3ET2RFS
%@archivingpolicy denypublisher denyfinaldraft24
%@dissemination WEBSCI; PORTALCAPES; COMPENDEX.
%@issn 0168-583X
%@issn 0167-5087
%@resumeid 8JMKD3MGP5W/3C9JGUH
%@resumeid 8JMKD3MGP5W/3C9JGJ8
%@usergroup administrator
%@usergroup sergio
%3 analysis of x-ray.pdf
%B Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
%X High-resolution X-ray diraction methods have been used to characterize nitrogen-doped silicon obtained by plasma immersion ion implantation (PIII). The Si wafers were implanted with the plasma potential controlled at 70 V, and a plasma density of 1:5  1010 cmÿ3. The high voltage pulser was operated with peak voltage of 10 kV, 6 ls pulse duration and repetition frequency of 20 Hz. Auger electron spectroscopy (AES) measurements were carried out revealing successful implantation of ions with accumulated nitrogen dose of 1:5  1017 cmÿ2. The (0 0 4) Si rocking curve (x-scan) was measured in a high resolution X-ray diractometer equipped with a Ge(2 2 0) four crystal monochromator before and after implantation. A small distortion of the Si(0 0 4)-rocking curve was clearly observed for the as-implanted sample. This rocking curve was simulated by dynamical theory of X-ray diraction, assuming a Gaussian strain distribution through the implanted region and using the data from the nitrogen pro®le obtained from the Auger measurements. With these assumptions, a good agreement between the measured and simulated rocking curves was obtained. Ó 2000 Elsevier Science B.V. All rights reserved.
%T Analysis of X-ray rocking curves in (0 0 1) silicon crystals implanted with nitrogen by plasma immersion ion implantation
%K High resolution X-ray di€,raction, Plasma immersion ion implantation, Surface analysis, Silicon crystals.
%@secondarytype PRE PI
%@group LAS-INPE-MCT-BR
%@group LAP-INPE-MCT-BR
%@copyholder SID/SCD
%@secondarykey INPE-12292-PRE/7612
%2 sid.inpe.br/iris@1916/2005/04.04.14.42.07
%@affiliation Laboratorio Associado de Sensores e Materiais, Instituto Nacional de Pesquisas Espaciais, CP515, 12201-970, S~ao Jose dos Campos,
%@affiliation Research Center Rossendorf, Institute of Ion Beam Physics and Materials Research, Dresden, Germany,
%P 1054-1057
%4 sid.inpe.br/iris@1916/2005/04.04.14.42
%D 2000
%V 161
%A Abramof, Eduardo,
%A Beloto, Antonio Fernando,
%A Gomes, Geraldo F.,
%A Berni, Luis Angelo,
%A Reuther, H.,
%@area FISMAT