%0 Journal Article
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%@nexthigherunit 8JMKD3MGPCW/3ESR3H2 8JMKD3MGPCW/3ET2RFS
%@archivingpolicy denypublisher denyfinaldraft24
%@dissemination WEBSCI; PORTALCAPES; COMPENDEX.
%@issn 0168-583X
%@issn 0167-5087
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%@usergroup administrator
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%3 porous silicon.pdf
%@secondarykey INPE-12293-PRE/7613
%A Beloto, Antonio Fernando,
%A Ueda, Mario,
%A Abramof, Eduardo,
%A Senna, Jose Roberto Sbragia,
%A Leite, Nelia Ferreira,
%A Silva, Marcos Dias da,
%A Reuther,  H.,
%T Porous silicon implanted with nitrogen by plasma immersion ion implantation
%B Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
%8 Apr.
%D 2001
%V Volumes 175-177
%P 224-228
%2 sid.inpe.br/iris@1916/2005/04.04.17.02.37
%4 sid.inpe.br/iris@1916/2005/04.04.17.02
%K Porous silicon, Plasma immersion ion implantation, Reflectance, Photoluminescence.
%X Porous silicon (PS) samples were prepared on (1 0 0) monocrystalline silicon wafers and implanted with nitrogen by plasma immersion ion implantation (PIII). Characterization by Auger electron spectroscopy (AES) showed the presence of the implanted nitrogen and also SiO2 and Si3N4 compounds on the sample surfaces. The effect of the implantation and consequently of the compounds was analyzed measuring the reflectance for wavelengths between 200 nm and 800 nm on the implanted samples. The results show a strong reduction of the reflectance in the ultraviolet region of the spectrum, in agreement with a tendency for the intensity of the peak of the ultraviolet excited photoluminescence to increase with the PIII treatment time. These characteristics can be explored and appropriately used in the fabrication of optoelectronics devices based on PS.
%@language English
%@copyholder SID/SCD
%@secondarytype PRE PI
%@area FISMAT
%@group LAS-INPE-MCT-BR
%@group LAP-INPE-MCT-BR
%@affiliation Laboratório Associado de Materiais e Sensores (LAS), Instituto Nacional de Pesquisas Espaciais (INPE), S.J. Campos, S. Paulo, Brazil,
%@affiliation Research Center Rossendorf, Institute of Ion Beam Physics and Materials Research, Dresden, Germany,