%0 Journal Article
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%@dissemination WEBSCI; PORTALCAPES; COMPENDEX.
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%3 annealing effects.pdf
%X Silicon samples were implanted with helium using plasma immersion ion implantation (PIII). The effects of implantation were analyzed by Raman spectroscopy, scanning electron microscopy (SEM), atomic force microscopy (AFM) and reflectance measurements before and after PIII, and after annealing (325 degrees C, for 30, 60 and 90 min and 450 degrees C for 30 min, in nitrogen atmosphere). After annealing, large bubbles were observed from SEM images and a connection between surface microstructure and materials properties was analyzed through AFM measurements. It was observed a reduction of the reflectance and an increase of the peak intensity of the photoluminescence (PL) with the increasing of the annealing time.
%8 Oct.
%N 1-2
%T Annealing effects in samples of silicon implanted with helium by plasma immersion ion implantation
%@secondarytype PRE PI
%K MATERIALS PHYSICS, PIII, Ion implantation, Photoluminescence, Annealing, Insulator material technology, Nitrogen, Temperature, PIII, FÍSICA DE MATERIAIS, Implantação iônica, Fotoluminescência, Tecnologia, Nitrogêneo, Temperatura.
%@visibility shown
%@group LAP-INPE-MCT-BR
%@group LAP-INPE-MCT-BR
%@group LAP-INPE-MCT-BR
%@secondarykey INPE-13205-PRE/8461
%@copyholder SID/SCD
%@issn 0168-583X
%@issn 0167-5087
%2 sid.inpe.br/iris@1916/2005/11.25.17.28.04
%@affiliation Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Plasma (INPE.LAP)
%@affiliation Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Plasma (INPE.LAP)
%@affiliation Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Plasma (INPE.LAP)
%@project Implantação iônica por imersão em plasma (IIIP)
%B Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
%P 219-223
%4 sid.inpe.br/iris@1916/2005/11.25.17.28
%D 2005
%V 240
%A Reis, J. C. N.,
%A Beloto, Antonio Fernando,
%A Ueda, Mário,
%@area FISPLASMA