%0 Journal Article
%@holdercode {isadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S}
%@nexthigherunit 8JMKD3MGPCW/3ET2RFS
%@archivingpolicy denypublisher denyfinaldraft24
%@dissemination WEBSCI; PORTALCAPES; COMPENDEX.
%3 1-s2.0-S0168583X05010682-main.pdf
%X Experiments comparing nitrogen ion implantations in Al5052 by beam and plasma immersion were carried out. Beam implantation (BI) was carried out using a 100 keV, high current beam implanter while the plasma immersion ion implantation (PIII) was obtained using a glow discharge plasma source coupled to a pulsed high voltage supply. A nitrogen BI dose of 5 · 1017 cm2 at 100 keV was attained with near Gaussian implantation profile while the PIII was performed until we reached similar doses with a maximum energy of 15 keV. Implantation profiles were obtained by Auger electron spectroscopy (AES). X-ray diffraction (XRD) indicated the formation of AlN in both cases but it was more clearly demonstrated by high resolution AES. For BI treatment, a buried AlN layer was achieved while for PIII, a layer of AlNxOy close to the surface was seen. Due to the high temperature reached in the PIII processing (400 C), a softening of the Al5052 bulkresulted while for BI processed samples with <200 C an increase in hardness was observed.
%T Comparison of nitrogen ion beam and plasma immersion implantation in Al5052 alloy
%K Nitrogen ion implantation, Al5052 alloy, Ion beam, Plasma immersion ion implantation.
%@secondarytype PRE PI
%@usergroup administrator
%@usergroup marciana
%@usergroup vinicius
%@group LAP-INPE-MCT-BR
%@secondarykey INPE--PRE/
%@issn 0168-583X
%@issn 0167-5087
%2 sid.inpe.br/iris@1916/2005/12.09.15.47.41
%@affiliation Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Plasmas, (INPE, LAP)
%B Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
%P 199–203
%4 sid.inpe.br/iris@1916/2005/12.09.15.47
%@documentstage not transferred
%D 2005
%V 240
%@doi 10.1016/j.nimb.2005.06.115
%A Ueda,  Mario,
%A Reuther, H,
%A Lepienski, C. M.,
%@area FISPLASMA