%0 Journal Article
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%@nexthigherunit 8JMKD3MGPCW/3ESR3H2
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%3 72.pdf
%X The quantum transport of spin-polarized electrons across nonmagnetic III-V semiconductor multiple barriers is considered theoretically. We have calculated the spin dependent transmission coeÆcient, for conducting electrons transversing lattice-matched In0:53Ga0:47As/GaAs0:5Sb0:5/In0:53Ga0:47As/ InP/In0:53Ga0:47As nanostructures with dierent numbers of asymmetric double barriers, as a func- tion of electron energy and angle of incidence. Spin-orbit split resonances, due to the Rashba term, are observed. The envelope function approximation and the Kane kp model for the bulk are used. For an unpolarized incident beam of electrons, we also obtain the spin polarization of the trans- mitted beam. The formation of spin dependent minibands of energy with nonzero transmission is observed.
%8 June
%N 2
%T Resonant Tunneling of Polarized Electrons Through Nonmagnetic III-V Semiconductor Multiple Barriers
%@secondarytype PRE PN
%K SENSORS AND MATERIALS, Semiconductor, Barriers, Nonmagnetic, SENSORES E MATERIAIS, Semicondutor, Barreiras, Não magnético.
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%@group
%@group
%@group LAS-INPE-MCT-BR
%@secondarykey INPE-13520-PRE/8733
%@copyholder SID/SCD
%@issn 0103-9733
%2 sid.inpe.br/iris@1916/2006/02.15.12.44.11
%@affiliation Universidade Federal da Bahia, Instituto de Física
%@affiliation Universidade Federal da Bahia, Instituto de Física
%@affiliation Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Sensores e Materiais, (INPE. LAS)
%@project Fisica da Matéria Condensada (MATCON)
%B Brazilian Journal of Physics
%P 321-323
%4 sid.inpe.br/iris@1916/2006/02.15.12.44
%D 2002
%V 32
%A Araujo, C. Moysés,
%A Silva, A. Ferreira da,
%A Andrada e Silva, Erasmo Assumpção de,
%@dissemination WEBSCI; PORTALCAPES; SCIELO.
%@area FISMAT