%0 Journal Article
%@holdercode {isadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S}
%@nexthigherunit 8JMKD3MGPCW/3ESR3H2 8JMKD3MGPCW/3ET2RFS
%@resumeid 8JMKD3MGP5W/3C9JHSB
%@resumeid 8JMKD3MGP5W/3C9JGJ8
%@archivingpolicy denypublisher denyfinaldraft24
%@usergroup administrator
%@usergroup vinicius
%3 51.pdf
%B Surface and Coatings Technology
%@dissemination WEBSCI; PORTALCAPES.
%2 sid.inpe.br/iris@1916/2006/03.07.13.51.34
%4 sid.inpe.br/iris@1916/2006/03.07.13.51
%X Plasma immersion ion implantation (PIII) of nitrogen in silicon (Si) wafers was carried out using a de glow discharge plasma source and a hard tube pulser. Ion irradiation times ranging from 3 to 60 min were used to accumulate different doses. Surface analysis of these samples was carried out by Auger electron spectroscopy (AES), revealing a high atomic concentration of nitrogen (up to 60%) in the as-implanted Si wafer, besides the presence of different impurities as oxygen and carbon in significant quantities. Depth profiles of these elements were obtained as well as of compound species as SiO2 and Si3N4, using this high-energy resolution AES. Comparing the concentration profiles of implanted nitrogen in Si and the corresponding retained doses in these samples, it was possible to understand the thermal and sputtering effects in our present PIII experiment. High-resolution XRD results corroborate the formation of highly stressed layers in the as-implanted substrates. These experimental results are compared to simulations obtained by TRIDYN code. (C) 2001 Elsevier Science B.V. All rights reserved.
%8 Feb
%N 1-3
%T Plasma immersion ion implantation of nitrogen in Si: formation of SiO2, Si3N4 and stressed layers under thermal and sputtering effects
%K plasma immersion ion implantation, silicon nitride, surface modification, Auger electron spectroscopy.
%@secondarytype PRE PI
%@group LAP-INPE-MCT-BR
%@group LAS-INPE-MCT-BR
%@copyholder SID/SCD
%@secondarykey INPE-13581-PRE/8791
%@issn 0257-8972
%@affiliation Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Plasmas, (INPE, LAP),
%P 244-248
%D 2001
%V 136
%A Ueda,  Mario,
%A Beloto, Antonio Fernando,
%A Reuther, H.,
%A Parascandola, S.,
%@area FISPLASMA