%0 Journal Article
%@holdercode {isadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S}
%@nexthigherunit 8JMKD3MGPCW/3ET2RFS
%X Boron-doped polycrystaline diamond films grown by hot-filament-assisted chemical vapor deposition were studied with ultraviolet photoemission spectroscopy (UPS), Raman spectroscopy, X-ray diffractometry and current voltage measurements. The UPS measurement shows that the work function (0) without electric field is about 3.9 W. The field-emission current-voltage measurements indicate a threshold voltage ranging from 8.97x10^(6) to 9.64x10^(6) V/m and a work function (phi) about.0.3 eV. These results show that boron doped diamond films exhibit a negative electron affinity in high electric field.
%8 Mar.
%N 1
%T Electron-field emission measurements from boron-doped CVD diamond on tantalum
%@electronicmailaddress americo@plasma.inpe.br
%@electronicmailaddress gms@plasma.inpe.br
%K tecnologia de plasma, plasma technology, films, surface.
%@secondarytype PRE PN
%@archivingpolicy denypublisher denyfinaldraft12
%@usergroup administrator
%@usergroup marciana
%@group LAP-INPE-MCT-BR
%@group LAP-INPE-MCT-BR
%3 a06v33n1.pdf
%@copyholder SID/SCD
%@secondarykey INPE-10342-PRE/5843
%U http://dx.doi.org/10.1590/S0103-97332003000100006
%@issn 0103-9733
%2 sid.inpe.br/marciana/2004/01.13.10.59.49
%@affiliation Instituto Nacional de Pesquisas Espaciais (INPE)
%@affiliation Instituto Nacional de Pesquisas Espaciais (INPE)
%@affiliation Instituto Tecnológico de Aeronáutica, Departamento de Química,  São José dos Campos, SP, Brasil
%B Brazilian Journal of Physics
%@versiontype publisher
%P 94-97
%4 sid.inpe.br/marciana/2004/01.13.10.59
%@documentstage not transferred
%D 2003
%V 33
%@doi 10.1590/S0103-97332003000100006
%A Gonçalves, José Américo Neves,
%A Sandonato, Gilberto Marrega,
%A Iha, K.,
%@dissemination WEBSCI; PORTALCAPES; SCIELO.
%@area FISPLASMA