%0 Journal Article
%@holdercode {isadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S}
%@nexthigherunit 8JMKD3MGPCW/3ESR3H2
%@archivingpolicy denypublisher denyfinaldraft24
%@issn 0925-9635
%@resumeid
%@resumeid 8JMKD3MGP5W/3C9JH33
%@usergroup administrator
%@usergroup marciana
%3 influence.pdf
%X This work presents a study of CVD diamond growth on silicon nitride-based ceramics with the addition of carbon tetrafluoride (CF4) in a hot filament-assisted reactor (HFCVD). Silicon nitride substrates were hot pressed under a nitrogen atmosphere for 90 min at 1750 degreesC, giving specimens of very high density and good mechanical properties. The CF4 addition is known to bring several advantages to diamond growth and, in particular, in this work, an important interaction of the CF4-containing gas phase with the silicon nitride (Si3N4) substrates has been proven to be very beneficial for nucleation, growth and adherence of the diamond films. A basic gas mixture of H-2/1.5 vol.% CH4/0.5 vol.% CF4 was used in the growth experiments. The nucleation study reveals a strong interaction of the halogen-containing gas phase with the vitreous phase on the substrate surface. A strong erosion of the surface has been observed, which induced a high nucleation density (N-d) of the order of 10(8) particles cm(-2), without any surface pre-treatment. Silicon nitride surface analysis was performed with Raman and infrared specular reflectance spectroscopy. Results suggest the erosion of the vitreous phase, mainly the silica (SiO2) component, and the formation of silicon carbide, prior to diamond growth. Raman spectra and scanning electron microscopy (SEM) show better quality film grown with CF4 addition. Indentation tests with a Rockwell C tip, at variable charge, show a better film adherence if grown with CF4 addition.
%8 Nov.
%N 11
%T Influence of CF4 addition for HFCVD diamond growth on silicon nitride substrates
%@secondarytype PRE PI
%K MATERIALS PHYSICS, Diamond films, Sintering, Silicon nitride, Halogen, Intergranular phases, FÍSICA DE MATERIAIS, Filmes de diamante, Nitrato de silicone, Halogêneo, Fase intergranular.
%@visibility shown
%@group
%@group LAS-INPE-MCT-BR
%@secondarykey INPE-10740-PRE/6199
%@copyholder SID/SCD
%2 sid.inpe.br/marciana/2004/06.22.10.54.02
%@affiliation Universidade de Aveiro, Department of Ceramic and Glass Engineering, Campus Universitário Santiago (UA.UIMC)
%@affiliation Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Sensores e Materiais (INPE.LAS)
%@affiliation Centro Tecnico da Aeronautica (CTA.IAE.AMR)
%@project DIMARE: Diamante e materiais relacionados
%B Diamond and Related Materials
%P 2002-2009
%4 sid.inpe.br/marciana/2004/06.22.10.54
%D 2001
%V 10
%@doi 10.1016/S0925-9635(01)00468-X
%A Silva, V. A.,
%A Corat, Evaldo José,
%A Silva, C. R. M.,
%@dissemination WEBSCI; PORTALCAPES; COMPENDEX.
%@ 0925-9635
%@area FISMAT