%0 Journal Article
%@holdercode {isadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S}
%@nexthigherunit 8JMKD3MGPCW/3ET2RFS
%@archivingpolicy denypublisher denyfinaldraft24
%@issn 0925-9635
%@resumeid 8JMKD3MGP5W/3C9JHFN
%@resumeid 8JMKD3MGP5W/3C9JHBA
%@usergroup administrator
%@usergroup marciana
%3 characterization.pdf
%X Boron doped diamond films grown by chemical vapor deposition on silicon (1 1 1) were measured by Raman spectroscopy and X-ray diffractometry to investigate the crystallographic direction and the lattice parameters of both the bSiC and diamond films with different levels of dopant. It was observed that the level of dopant has a significant influence on the lattice parameters for a boronycarbon ratio of 20 000 ppm, and also that the expansion of the lattice parameters was due to compressive thermal stress of diamond films.
%8 Aug.
%N 8
%T Characterization of boron doped CVD diamond films by Raman spectroscopy and X-ray diffractometry
%@electronicmailaddress americo@plasma.inpe.br
%@secondarytype PRE PI
%K PLASMA, Diamond films,  X-ray diffractometry, Raman spectroscopy, Lattice parameter, PLASMA, Filmes de diamante, Raio-x, Difractometria, Espectroscopia Raman.
%@visibility shown
%@group LAP-INPE-MCT-BR
%@group LAP-INPE-MCT-BR
%@secondarykey INPE-10743-PRE/6202
%@copyholder SID/SCD
%2 sid.inpe.br/marciana/2004/06.22.15.20.43
%@affiliation Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Plasma (INPE.LAP)
%@affiliation Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Plasma (INPE.LAP)
%@affiliation Instituto Tecnológico de Aeronáutica, Divisão de química (ITA)
%@project Tecnologia de plasma: Propulsão eletrostática
%B Diamond and Related Materials
%P 1578-1583
%4 sid.inpe.br/marciana/2004/06.22.15.20
%D 2002
%V 11
%A Gonçalves, José Américo Neves,
%A Sandonato, Gilberto Marrega,
%A Iha, K.,
%@dissemination WEBSCI; PORTALCAPES; COMPENDEX.
%@ 0925-9635
%@area FISPLASMA