%0 Journal Article
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%@archivingpolicy denypublisher denyfinaldraft12
%@issn 0103-9733
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%@resumeid 8JMKD3MGP5W/3C9JJ37
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%@usergroup administrator
%@usergroup marciana
%3 abramofeletrical.pdf
%@dissemination WEBSCI; PORTALCAPES; SCIELO.
%X Resisistivity and Hall measurements were performed at temperatures from 10 to 320K on Bi-doped PbTe layers grown on (111) BaF2 by molecular beam epitaxy. Samples with electron concentration varying from 1x1017 to 4x1019cm¡3 were obtained. Results indicated that all offered Bi atoms in the vapor phase were effectively incorporated in the PbTe as active donors. No thermal activation in the whole doping range was observed, indicating that the Bi donor level lies resonant with the conduction band. The mobility curve showed that the PbTe layers tend to a metallic behavior as the electron concentration increases. A value around 1x1019 cm¡3 is suggested for n+ PbTe contact layers in device application.
%8 June
%N 2A
%T Electrical properties of Bi-Doped PbTe layers grown by molecular beam epitaxy on BaF2 substrates
%@secondarytype PRE PN
%@group LAS-INPE-MCT-BR
%@copyholder SID/SCD
%@secondarykey INPE-10989-PRE/6445
%2 sid.inpe.br/marciana/2004/07.26.10.14.09
%B Brazilian Journal of Physics
%@language English
%4 sid.inpe.br/marciana/2004/07.26.10.14
%D 2004
%V 34
%A Anjos, Alexandre M. Pires dos,
%A Abramof, Eduardo,
%A Rappl, Paulo Henrique de Oliveira,
%A Ueta, Antonio Yukio,
%A Closs, Humberto,
%@area FISMAT