%0 Journal Article
%@holdercode {isadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S}
%@nexthigherunit 8JMKD3MGPCW/3ESR3H2
%@archivingpolicy denypublisher denyfinaldraft12
%3 0268-1242_6_9A_014.pdf
%X The influence of the (100) GaAs substrate preheating process on the crystalline quality of ZnTe epilayers grown by hot-wall epitaxy has been investigated. For preheating temperatures higher than 560-degrees-C and preheating times longer than 15 min, all layers were monocrystalline and grew in the [100] direction. The FWHM of the x-ray rocking curves were measured as a function of the preheating temperature and showed a minimum of 107 arcsec around 600-degrees-C. The dependence of the FWHM on the ZnTe layer thickness has also been determined. It decreases from 800 arcsec to 200 arcsec for an increase in the layer thickness from 1 to 5-mu-m and saturates at 100 arcsec for layers thicker than 6-mu-m. The layers showed an excellent homogeneity with a variation of 2% in the FWHM measured in different spots along the layer diagonal. The surface morphology was mirror-like and showed elongated textures. The resistivity of the layers at room temperature was 5 x 10(2) OMEGA-cm.
%8 Sept.
%N 9
%T X-Ray Rocking Curve Characterization of Znte Layers Grown on Gaas By Hot-Wall Epitaxy
%@secondarytype PRE PI
%@usergroup administrator
%@usergroup marciana
%@usergroup sergio
%@group LAS-INPE-BR
%@copyholder SID/SCD
%@secondarykey INPE-11259-PRE/6701
%@issn 0268-1242
%2 sid.inpe.br/marciana/2004/09.06.11.08.01
%@affiliation ABRAMOF E (reprint author), UNIV LINZ, INST EXPTL PHYS, LINZ, A-4040 AUSTRIA
%B Semiconductor Science and Technology
%@versiontype publisher
%P A80-A82
%4 sid.inpe.br/marciana/2004/09.06.11.08
%@documentstage not transferred
%D 1991
%V 6
%A Abramof, Eduardo,
%A Hingerl, K.,
%A Pesek, A.,
%A Sitter, H.,
%@dissemination WEBSCI; COMPENDEX.
%@ 0268-1242
%@area FISMAT