%0 Journal Article %@holdercode {isadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S} %@nexthigherunit 8JMKD3MGPCW/3ESR3H2 %@resumeid %@resumeid %@resumeid 8JMKD3MGP5W/3C9JJ37 %@resumeid %@resumeid 8JMKD3MGP5W/3C9JGJU %@resumeid 8JMKD3MGP5W/3C9JGUH %@archivingpolicy denypublisher denyfinaldraft12 %@usergroup administrator %@usergroup marciana %@usergroup sergio %3 magnetic field induced.pdf %X We report an investigation of the optical absorption spectrum, using non-polarized light, in PbxEu1-xTe, x=0 and x=0.095, epitaxial thick layers grown by molecular beam epitaxy (MBE). The absorption edge is described by a broad band, due to the electronic transitions from the 4f(7) of Eu2+ to the states in 4f(6)5d configuration, as seen previously in bulk Eu chalcogenides. When a magnetic field is applied, a narrow absorption band (full width similar to50 meV) emerges from the broad one. The energy of this absorption peak red shifts when the magnetic field increases, and reaches saturation when the Eu2+ attain ferromagnetic arrangement. This behaviour can be described by a localized excitation model with d - f exchange interaction. %8 June %N 2B %T Magnetic field induced absorption in PbxEu1-xTe magnetic semiconductors %@secondarytype PRE PN %K SENSORS AND MATERIALS, Magnetic field, Semiconductors, Antiferromagnetic EUTE, Polaron, Photoluminescence, Chalcogenides, Luminescence, SENSORES E MATERIAIS, Campos magnéticos, Semicondutores, Antiferromagnético, Fotoluminescência, Luminescência. %@visibility shown %@group %@group %@group LAS-INPE-MCT-BR %@group %@group LAS-INPE-MCT-BR %@group LAS-INPE-MCT-BR %@secondarykey INPE-11786-PRE/7145 %@copyholder SID/SCD %@issn 0103-9733 %2 sid.inpe.br/marciana/2004/12.08.16.18.04 %@affiliation Universidade de São Paulo, Instituto de Física (USP) %@affiliation Universidade de São Paulo, Instituto de Física (USP) %@affiliation Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Sensores e Materiais (INPE.LAS) %@affiliation Universidade de São Paulo, Instituto de Física (USP) %@affiliation Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Sensores e Materiais (INPE.LAS) %@affiliation Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Sensores e Materiais (INPE.LAS) %@project TECMAT: Tecnologia de materiais / Caracterização elétrica de materiais e dispositivos semicondutores %B Brazilian Journal of Physics %P 687-689 %4 sid.inpe.br/marciana/2004/12.08.16.18 %D 2004 %V 34 %A Hanamoto, L. K., %A Henriques, A. B., %A Rappl, Paulo Henrique de Oliveira, %A Oliveira, N. F., %A Ueta, Antonio Yukio, %A Abramof, Eduardo, %@dissemination WEBSCI; PORTALCAPES; SCIELO. %@area FISMAT