%0 Journal Article
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%@archivingpolicy denypublisher denyfinaldraft
%@dissemination PORTALCAPES
%@issn 0102-6895
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%@resumeid 8JMKD3MGP5W/3C9JGUH
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%@usergroup banon
%@usergroup marciana
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%3 measurement.pdf
%B Revista de Física Aplicada e Instrumentação
%X We have studied a 50/50 Å superlattice of GaAs/Al0.21Ga0.79As composition, modulation-doped with Si, to produce n = 1.4 × 1012 cm-2 electrons per superlattice period. The modulation-doping was tailored to avoid the formation of Tamm states, and photoluminescence (PL) due to interband transitions from extended superlattice states was detected. By studying the effects of a quantizing magnetic field on the superlattice PL, the miniband energy width, the reduced effective mass of the electron-hole pair, and the band gap renormalization could be deduced.
%N 21
%T Measurement of miniband parameters of a doped superlattice by photoluminescence in high magnetic fields
%@secondarytype PRE PN
%K MATERIALS PHYSICS, Doped superlattice, Photoluminescence, Magnetic fields, FÍSICA DE MATERIAIS, Fotoluminescência, Campos magnéticos.
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%@group LAS-INPE-MCT-BR
%@secondarykey INPE-15207-PRE/10077
%@copyholder SID/SCD
%2 sid.inpe.br/marciana/2004/12.14.10.11.39
%@affiliation Instituto de Física, Universidade de São Paulo (USP)
%@affiliation Instituto de Física, Universidade de São Paulo (USP)
%@affiliation Instituto de Física, Universidade de São Paulo (USP)
%@affiliation Instituto de Física, Universidade de São Paulo (USP)
%@affiliation Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Sensores e Materiais (INPE.LAS)
%@project TECMAT: Tecnologia de materiais
%P 2949-2953
%4 sid.inpe.br/marciana/2004/12.14.10.11
%D 2004
%V 37
%@doi 10.1088/0022-3727/37/21/002
%A Oliveira, R. F.,
%A Henriques, A. B.,
%A Lamas, T. E.,
%A Quivy, A. A.,
%A Abramof, Eduardo,
%@area FISMAT