%0 Journal Article %@holdercode {isadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S} %@nexthigherunit 8JMKD3MGPCW/3ESR3H2 %@archivingpolicy denypublisher denyfinaldraft24 %@resumeid 8JMKD3MGP5W/3C9JHU3 %@resumeid %@resumeid 8JMKD3MGP5W/3C9JGJ8 %@usergroup administrator %@usergroup sergio %3 nanodiamond films.pdf %@dissemination WEBSCI; PORTALCAPES; COMPENDEX. %2 sid.inpe.br/marciana/2005/07.05.12.07 %4 sid.inpe.br/marciana/2005/07.05.12.06 %X Nanocrystalline diamond (NCD) films were successfully grown on micrometric porous silicon (PS) substrate in a hot filament chemical vapor deposition (HFCVD) reactor. The films were deposited at substrate temperature of 920 K and 6.5 kPa, after seeding pretreatment. The gas flow rate was set in a 50 seem for Ar-CH4-H-2 Mixture. PS substrates were produced by anodic etching using n-type silicon wafers. The morphology, quality and electrochemical response of NCD have been analyzed by scanning electron microscopy (SEM), Raman scattering spectroscopy and cyclic voltammetry (CV) measurements. SEM images have shown faceted nanograins with average size from 30 to 50 nm and uniform surface texture covering all the supports among the pores resulting in an apparent micro honeycomb structure. Raman spectra have exhibited a shoulder at 1550 cm(-1) that is NCD characteristic and have confirmed the good quality films with diamond purity around 90%. Electrochemical response and capacitance behavior of NCD/PS electrodes immersed in aqueous electrolyte solution without redox-active reagents has been explored. The work potential window remains large for NCD, in a similar way of boron doped diamond (BDD), but with a large capacitive background current compared to BDD. NCD/PS presented capacitance values from 230 to 990 mu F cm(-2), while such capacitance values for BDD were between 20 and 40 mu F cm(-2) in the potential range of -0.5 up to 1.0 V x Ag/AgCl. (c) 2005 Elsevier B.V. All rights reserved. . %8 Mar-Jul %N 3-7 %T Nanodiamond films growth on porous silicon substrates for electrochemical applications %K nanocrystalline diamond, porous electrode, cyclic voltammetry / DOPED DIAMOND ELECTRODES, CHEMICAL-VAPOR-DEPOSITION, CARBON-FIBER CLOTHS, POLYCRYSTALLINE DIAMOND, EFFICIENCY, MECHANISM, OXIDATION. %@secondarytype PRE PI %@group LAS-INPE-MCT-BR %@copyholder SID/SCD %@secondarykey INPE-12856-PRE/8146 %@issn 0925-9635 %@affiliation Instituto Nacional de Pesquisas Espaciais, Laboratorio Associado de Sensores e Materiais (INPE, LAS), %@affiliation Univ Aveiro, Dept Engn Ceram & Vidro, Aveiro, P-3800 Portugal, %B Diamond and Related Materials %@language English %P 441-445 %D 2005 %V 14 %A Ferreira, Neidenei Gomes, %A Azevedo, Adriana Faria, %A Beloto, Antonio Fernando, %A Amaral, M., %A Almeida, F. A., %A Oliveira, F. J., %A Silva, R. F., %@area FISMAT