%0 Journal Article
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%3 berni-experimental.pdf
%X A simple dc glow discharge with controlled plasma floating potential was applied as a novel source for plasma immersion ion implantation with excellent results. The glow discharge source is normally used for the conditioning of fusion device chambers, taking advantage of the available high accelerating potential which is necessary for the ion bombardment of the walls. Combining an electron-emitting hot filament with this source, it was possible to get a stable discharge at pressures as low as 8 × 10−4 mbar and, operating it with potentials lower then 70 V, it was possible to reduce the Si sample etching down to zero from 2500 Å seen at potentials of native 350 V, when exposure times of 750 min were used in the samples surface subjected to plasma ion implantation of nitrogen. As a result, retained ion doses of 1.5 1017 cm−2 were obtained in etching-free Si surfaces.
%T Experimental results of a dc glow discharge source with controlled plasma floating potential for plasma immersion ion implantation
%@secondarytype PRE PI
%K Glow discharges, plasma immersion ion implantation.
%@group LAP-INPE-MCT-BR
%@group LAP-INPE-MCT-BR
%@group LAP-INPE-MCT-BR
%@group LAS-INPE-MCT-BR
%@secondarykey INPE-13758-PRE/8947
%@copyholder SID/SCD
%@issn 1434-6060
%2 sid.inpe.br/mtc-m16@80/2006/05.29.14.02.27
%@affiliation Instituto Nacional de Pesquisas Espaciais (INPE)
%@affiliation Instituto Nacional de Pesquisas Espaciais (INPE)
%@affiliation Instituto Nacional de Pesquisas Espaciais (INPE)
%@affiliation Instituto Nacional de Pesquisas Espaciais (INPE)
%@affiliation Research Center Rossendorf, Institute of Ion Beam Physics and Materials Research
%@project Implantação Iônica por Imersão em Plasma (IIIP)
%B Journal of Physics D: Applied Physics
%P 1592-1595
%4 sid.inpe.br/mtc-m16@80/2006/05.29.14.02
%D 2000
%V 33
%A Berni, Luis Angelo,
%A Ueda,  Mario,
%A Gomes, G. F.,
%A Beloto, Antonio Fernando,
%A Reuther, H.,
%@dissemination WEBSCI; PORTALCAPES.
%@area FISPLASMA