%0 Journal Article
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%3 Modeling and gradient pattern analysis of irregular.pdf
%@dissemination WEBSCI
%2 sid.inpe.br/mtc-m16@80/2006/06.22.12.44.52
%4 sid.inpe.br/mtc-m16@80/2006/06.22.12.44
%X Technological applications in opto-electronic devices have increased the interest in characterizing porous silicon structure patterns. Due to its physical properties, solutions from KPZ 2D are adopted to simulate the structure of porous material interface whose spatial characteristics are equivalent to those found in porous silicon samples. The analysis of the simulated and real scanning Force Microscopy (SFM) surfaces was done using the Gradient Pattern Analysis (GPA). We found that the KPZ 2D model presented asymmetry levels compatible with the irregular surfaces observed by means of SFM images of pi-Si.
%8 Apr.
%N 4
%T Modeling and gradient pattern analysis of irregular SFM structures of porous silicon
%@secondarytype PRE PI
%K porous silicon, KPZ equation, gradient pattern analysis, nanostructures, ASYMMETRIC FRAGMENTATION PATTERNS, DYNAMICS.
%@group LAC-INPE-MCT-BR
%@group LAC-INPE-MCT-BR
%@group LAC-INPE-MCT-BR
%@secondarykey INPE-13802--PRE/8988
%@copyholder SID/SCD
%@issn 0026-2692
%@affiliation Instituto Nacional de Pesquisas Espaciais, Laboratorio Associado de Computação e Matemática Aplicada (INPE.LAC),
%@affiliation Instituto Nacional de Pesquisas Espaciais, Laboratorio Associado de Computação e Matemática Aplicada (INPE.LAC),
%@affiliation Grupo de Fisica Basica e Aplicada em Materiais Semicondutores, Laboratorio de Propriedades Opticas, Instituto de Fisica, Universidade Federal da Bahia,
%@affiliation Grupo de Fisica Basica e Aplicada em Materiais Semicondutores, Laboratorio de Propriedades Opticas, Instituto de Fisica, Universidade Federal da Bahia,
%@affiliation Grupo de Dispositivos Nanoestruturados, Departamento de Física, Universidade Federal do Paraná,
%@affiliation Instituto Nacional de Pesquisas Espaciais, Laboratorio Associado de Computação e Matemática Aplicada (INPE.LAC),
%@affiliation Department of Physics, Condensed Matter Theory Group, Uppsala University,
%@affiliation Applied Materials Physics, Department of Materials Science and Engineering, Royal Institute of Technology,
%@affiliation Grupo de Fisica Basica e Aplicada em Materiais Semicondutores, Laboratorio de Propriedades Opticas, Instituto de Fisica, Universidade Federal da Bahia,
%B Microelectronics Journal
%P 290-294
%@documentstage simone
%D 2006
%V 37
%A Baroni, M. P. M. A.,
%A Rosa, Reinaldo Roberto,
%A Silva, A. Ferreira,
%A Pepe, I.,
%A Roman, L. S.,
%A Ramos, Fernando Manuel,
%A Ahuja, R.,
%A Persson, C.,
%A Veje, E.,
%@area COMP