%0 Journal Article %@holdercode {isadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S} %@nexthigherunit 8JMKD3MGPCW/3ESR3H2 %@archivingpolicy denypublisher denyfinaldraft12 %@resumeid %@resumeid 8JMKD3MGP5W/3C9JGUH %@resumeid 8JMKD3MGP5W/3C9JJ37 %@usergroup administrator %@usergroup simone %3 Characterization of SnTe films.pdf %X A series of SnTe layers with thicknesses varying from 0.42 to 9.1 mu m were grown by molecular beam epitaxy on (111) BaF2 substrates. The SnTe lattice parameter was found to be 6.331 angstrom as determined from x-ray diffraction spectra measured in the triple-axis configuration. The FWHM of the (222) SnTe x-ray rocking curves indicated a good crystalline quality and an unusual dependence on layer thickness. Atomic force microscopy (AFM) of the SnTe surface revealed spirals with monolayer steps formed around threading dislocations, similar to the PbTe on BaF2 epitaxy.. The dislocation density was estimated from the AFM picture to be 9AC cm(-2). Small black pits corresponding to holes that were left during growth were also observed on the AFM images. Sri diffusion can be a possible reason for these pits and the relatively high dislocation density. Electrical measurements showed that the SnTe epilayers present a typical p-type carrier concentration around 10(20) cm(-3), almost temperature independent and a Hall mobility which decreases from 10(4) to 10(3) cm(2)/V.s as the temperature increases from 10 to 350K. %8 June %N 2A %T Characterization of SnTe films grown by molecular beam epitaxy %@secondarytype PRE PN %K SnTe, molecular beam epitaxy, BaF2 substrates, TIN TELLURIDE, SPIRAL GROWTH, SI(111), PBSE, PBTE. %@group LAS-INPE-MCT-BR %@group LAS-INPE-MCT-BR %@group LAS-INPE-MCT-BR %@group LAS-INPE-MCT-BR %@secondarykey INPE-14333-PRE/9420 %@copyholder SID/SCD %@issn 0103-9733 %2 sid.inpe.br/mtc-m16@80/2006/08.03.13.58.58 %@affiliation Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Sensores e Materiais (INPE.LAS) %@affiliation Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Sensores e Materiais (INPE.LAS) %@affiliation Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Sensores e Materiais (INPE.LAS) %@affiliation Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Sensores e Materiais (INPE.LAS) %B Brazilian Journal of Physics %P 324-327 %4 sid.inpe.br/mtc-m16@80/2006/08.03.13.58 %D 2006 %V 36 %A Mengui, Úrsula Andréia, %A Abramof, Eduardo, %A Rappl, Paulo Henrique de Oliveira, %A Ueta, Antonio Yukio, %@dissemination WEBSCI; PORTALCAPES; SCIELO. %@area FISMAT